Extracting the Threshold Voltage from the Subthreshold to Strong Inversion Transition Region of Mosfets

A new technique is offered as an alternative to extract the threshold voltage of MOSFETs. It defines the threshold at the transition from subthreshold -to-strong inversion operation. Besides its stronger physical foundation, the method provides greater noise and measurement error immunity than conventional methods because, instead of the differentiation operations required by those methods, it is based on an auxiliary operator that involves integration of the drain current as a function of gate voltage. Threshold voltage values extracted using this method from synthetic and real long and short channel MOSFETs match very well those extracted by conventional methods.